Stacks

10 years and she never deleted, you just have to respect it

$MU $SKHY TSMC “considering” 3D DRAM. Fake news. 100% manipulation. TSMC is a logic foundry, not a DRAM designer, and it has zero 3D DRAM IP. -3D DRAM took Micron, SK hynix and Samsung decades of research. TSMC doesn’t even have the building blocks for high performance planar DRAM. -The cell is still 1T1C DRAM: retention, refresh, sense amps, row hammer. That takes decades of DRAM design know how, and TSMC has never built a DRAM, let alone performance DRAM. -The stacking is 3D NAND style: 100+ layer Si/SiGe superlattice and high aspect ratio etch. TSMC has never run NAND at volume. -The horizontal capacitor is the hardest step in the flow. Nobody has done it at competitive cost yet. -Samsung, SK hynix and Micron own the patent wall. -The incumbents are years ahead. SK hynix showed 56% yield on a 5 layer stack back in 2024. Micron already has two 3D DRAM generations, 3D1 and 3D2, on its roadmap. -Even the leaders are targeting the 2030s. TSMC has no fab, no team and no IP.